spin transistor

Spin transistor will have remarkable applied potential because of its excellent properties .

由于自旋晶体管优良的性能，在计算机和通讯领域有广泛的应用前景。

Effects Induced by Different Spin-Orbit Couplings in Spin Transistor and Spin Injection

自旋晶体管和自旋注入中不同自旋轨道耦合引起的效应

Double Barrier Magnetic Tunnel Junctions and Their Magneto-electric Properties for Spin Transistor Devices

用于自旋晶体管的双势垒磁性隧道结及其磁电性质

The principle of the new microelectronic devices , spin transistor and spin valve transistor is reviewed .

介绍了新型微电子器件自旋晶体管和自旋阀晶体管的工作原理。

A Spin Transistor with Current Amplification

一种电流放大型自旋晶体管

The Quest for the Spin Transistor Color quasilinear diffusion

非线性扩散探索自旋晶体管

Investigation on NiFe / Ag / NiFe Nanometer Junction Spin Transistor

NiFe/Ag/NiFe纳米结自旋晶体管研究

Giant Magnetoresistance Effect and Spin Transistor of Ferromagnetic Multilayers

铁磁性多层膜的巨磁电阻效应和自旋晶体管

Spin transistor is a three-terminal spin electronic device , which is similar as conventional semiconductor transistor .

自旋晶体管是指利用电子自旋自由度构建的在结构上类似于传统半导体晶体管的三端自旋器件。

Several model devices have been schemed out . For example , Datta and Das designed the first spin transistor .

目前，一些原型器件已被设计出来，如Datta和Das设计了第一个自旋晶体管等。

The Quest for the Spin Transistor

探索自旋晶体管

It 's coefficient of magneto-resistance is Δ R / R ≥ 9 % , the coefficient of collector current amplify is MC > 587 % ( in room temperature ) . The properties of spin transistor increase as the base thickness decreasing .

该薄膜磁阻系数ΔR/R≥9%，全金属自旋晶体管试样集电极电流变化MC>587%（常温），且其性能随基极Ag层厚度减小而增强。

These data and results are helpful to design and develop spin field effect transistor , spin light-emitting diode , spin resonant tunneling device , etc.

这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。

It is envisioned that the magnetism , electronics and informatics will ultimately lead to new spin-based multifunctional devices such as spin field effect transistor , spin light emitting diode , modulators and quantum bits for quantum computation and communication .

磁学、电子学和信息学的结合有望产生出自旋场效应晶体管、自旋发光二极管、调制器及用于量子计算、量子通信等装置的新型器件。